Technology Information

Fabrication Method for Semiconductor Wire with an Outer Shell Having Metallic Behavior

A semiconductor wire fabrication method for producing the electric contacts which display highly reliable and reproducible electrical behavior without metal doping.
UIRF Case #:08043

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Relevant Publications

Level of Development


Technology Description

Researchers at the University of Iowa have developed a novel method for making semiconductor nanowires that does not involve metal doping to make the outer shell of the wire behave like metal. This fabrication method uses epitaxial combinations of semiconductor materials in wires such that a Type III band offset or a negative band-gap of one of the semiconductor materials can be initiated due to strain. The resulting wires will contain only semiconductor materials, but the outer shell will have metallic conductivity.

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Patent Link(s)

US7960715    US8124518    

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