Technology Information

Device and Method for Tuning Quantum Dots to Emit A Greater Wavelength of Light

Wetting quantum dots in electrolyte solutions enables exposure to Stark Effect enhancement of particle tunability.
UIRF Case #:08016

Relevant PublicationsLevel of Development
Technology DescriptionInventor Web Site Link
Patent LinksContact Information
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Relevant Publications

Flatte ME, Kornyshev AA, Urbakh M. Giant Stark effect in quantum dots at liquid/liquid interfaces: A new option for tunable optical filters. Proc Natl Acad Sci U S A. 2008 November 25; 105(47): 18212�18214.

Level of Development

General: Conceptual

Technology Description

Researchers at the University of Iowa have identified a method to provide an unprecedented possibility to tune the optical properties of quantum dots. This technology is dependent on a phenomenon known as Stark Effect, which causes the shifting and splitting of the spectral lines of atoms and molecules that are subjected to an electric field. The frequency of light absorbed (or emitted) is determined by the frequency of the spectral lines and thus the frequency of the absorbed (or emitted) light can be changed (or tuned) by the application of an electric field. To date, the fundamental absorption capabilities of a quantum dot via Stark Effect have been limited due to the electrical breakdown of the solid state material surrounding the dot. This, in-turn, limits the range of wavelengths over which the quantum dot can be tuned hence decreasing our capability to tune the optical properties of quantum dots. The inventors have addressed this particular problem by using the theory that nano-particles can have a strong variation of absorption frequency when the fields are treated at a two immiscible electrolytic solutions (ITIES) interface. This interface occurs between two immiscible liquids (water and an organic fluid) mixed with two salts. Under the influence of an electric field, two back-to-back electrical double layers are formed on the two sides of this ITIES interface. ITIES provides a defect-free region for localization of quantum dots. The localization of these quantum dots at the ITIES interface causes the capacitance across the ITIES interface to be substantially low resulting in more than a 90% drop of the applied electric potential across the interface housing the quantum dots.

Inventor Web Site Link(s)

Patent Link(s)

US8503057    EP 09738380.6    GB0807793.5    JP2011-506765    

Contact Information

Sean Kim